VITA 12 2022-08-17T05:27:47+00:00

Vacuum Plasma System

Reactive Ion Etching (Vertical Chamber)
VITA 12
Reactive Ion Etching – Vertical Chamber
Process Mode RIE
Electrode Size 14.4 Inch
RF Generator 13.56MHz / Max. 300W
MFC Max. 200 sccm
Gauge Pressure Atm ~ 5 x 10-4 Torr
Operation Manual & Automatic
Geometry W.748 x D.1,139 x H.1,220 (mm)
DATA SHEET(PDF)
Enquiries
Technical Data
Vertical Chamber RIE

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Process Chamber
  • RIE (Reactive Ion Etching) Mode
  • Vertical Chamber with 3-level shower heads
  • Diameter : 14.4 inch (for 12” wafer)
  • Single Block Aluminum (Not welded, Minimized gas leak)
  • Uniform gas flow design (Patent No. 10-1701381)
Generator
  • Frequency : (RF) 13.56MHz
  • Powe r: Max. 600W (Opt. 1,000W)
  • Automatic Impedance Matching
  • Process Monitoring and Control
Gas flow module
  • Maximum Number of gas channels : × 4 lines
  • Gas flow control : High repeatability MFC
  • Purge line : × 1 ea
  • Vent line : × 1 ea
  • MFC Flow rate : Max.200 sccm (1 sccm increment)
Vacuum Package
  • DN40 pneumatic operated soft-start pumping valve
  • APC Module: Butterfly type throttle valve combined with 10 Torr Capacitance Manometer
  • Pump : Oil Rotary Pump
  • Pump displacement : 1,000 L/min @ 60Hz
  • Ultimate Pressure: 5×10-3 Torr
Controller
  • DSP on board signal controller
  • Automatic / Manual operation
  • Interactive integrated software
  • 10.2” Touchscreen PC & USB data transfer
  • Saving and loading of process recipes
  • Real-time process graphs and error monitoring
System Dimension
  • Main System : 748×1,139×1,220 (W×D×H, mm)
  • Vacuum Pump : 709×250×387 (W×D×H, mm)
  • Chiller : 580×290×470 (W×D×H, mm)