Vacuum Plasma System
Dual Mode (Plasma Etching & Reactive Ion Etching)
CIONE 4
Dual Mode Vacuum Plasma – RIE & PE
| Process Mode | PE / RIE |
|---|---|
| Chamber | W.140 x D.200 x H.110 (mm) |
| Generator | 20~100kHz Max. 100W |
| MFC | Max. 100 sccm |
| Gauge Pressure | Atm ~ 5 x 10-4 Torr |
| Operation | Manual & Automatic |
| Geometry | W.440 x D.500 x H.560 (mm) |
Technical Data
Surface Treatment
(RIE Mode)
(RIE Mode)
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Process Chamber
- Dual Mode : PE (Plasma Etching) & RIE (Reactive Ion Etching) Mode with dual electrode
- Size : 140×200×110 (W×D×H, mm)
- Single Block Aluminum (Not welded, Minimized gas leak)
- Uniform gas flow design (Patent No. 10-1697205)
Generator
- Frequency : 20~100kHz (10kHz increment)
- Power : Max. 100W (Adjustable in 1W increment)
- Automatic Impedance Matching
- Process Monitoring and Control
Gas flow module
- Maximum Number of gas channels : × 3 lines
- Gas flow control: High repeatability MFC
- Purge line : × 1 ea
- Vent line : × 1 ea
- MFC Flow rate : Max.100 sccm (1 sccm increment)
Vacuum Package
- Gauge : Pirani (5×10-4 Torr)
- Pump : Oil Rotary Pump
- Pump displacement : 200L/min @ 60Hz
- Ultimate Pressure : 5×10-3 Torr
Controller
- DSP on board signal controller
- Automatic / Manual operation
- Interactive integrated software
- 7” Touchscreen PC & USB data transfer
- Saving and loading of process recipes
- Process graphs and alarm log loading
System Dimension
-
- Main System : 440×500×560 (W×D×H, mm)
Vacuum Pump : 460×160×250 (W×D×H, mm)
Chamber structure
