CIONE 4 2022-08-17T04:53:44+00:00

Vacuum Plasma System

Dual Mode (Plasma Etching & Reactive Ion Etching)
CIONE 4
Dual Mode Vacuum Plasma – RIE & PE
Process Mode PE / RIE
Chamber W.140 x D.200 x H.110 (mm)
Generator 20~100kHz Max. 100W
MFC Max. 100 sccm
Gauge Pressure Atm ~ 5 x 10-4 Torr
Operation Manual & Automatic
Geometry W.440 x D.500 x H.560 (mm)
DATA SHEET(PDF)
Enquiries
Technical Data
Surface Treatment
(RIE Mode)

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Process Chamber
  • Dual Mode : PE (Plasma Etching) & RIE (Reactive Ion Etching) Mode with dual electrode
  • Size : 140×200×110 (W×D×H, mm)
  • Single Block Aluminum (Not welded, Minimized gas leak)
  • Uniform gas flow design (Patent No. 10-1697205)
Generator
  • Frequency : 20~100kHz (10kHz increment)
  • Power : Max. 100W (Adjustable in 1W increment)
  • Automatic Impedance Matching
  • Process Monitoring and Control
Gas flow module
  • Maximum Number of gas channels : × 3 lines
  • Gas flow control: High repeatability MFC
  • Purge line : × 1 ea
  • Vent line : × 1 ea
  • MFC Flow rate : Max.100 sccm (1 sccm increment)
Vacuum Package
  • Gauge : Pirani (5×10-4 Torr)
  • Pump : Oil Rotary Pump
  • Pump displacement : 200L/min @ 60Hz
  • Ultimate Pressure : 5×10-3 Torr
Controller
  • DSP on board signal controller
  • Automatic / Manual operation
  • Interactive integrated software
  • 7” Touchscreen PC & USB data transfer
  • Saving and loading of process recipes
  • Process graphs and alarm log loading
System Dimension
    • Main System : 440×500×560 (W×D×H, mm)

Vacuum Pump : 460×160×250 (W×D×H, mm)

Chamber structure