Vacuum Plasma System
Reactive Ion Etching (Vertical Chamber)
VITA 8
Reactive Ion Etching – Vertical Chamber
| Process Mode | RIE |
|---|---|
| Electrode Size | 9.2 Inch |
| RF Generator | 13.56MHz / Max. 300W |
| MFC | Max. 200 sccm |
| Gauge Pressure | Atm ~ 5 x 10-4 Torr |
| Operation | Manual & Automatic |
| Geometry | W.748 x D.1,139 x H.1,220 (mm) |
Technical Data
Vertical Chamber RIE
Watch video
Process Chamber
- RIE (Reactive Ion Etching) Mode
- Vertical Chamber with 3-level shower heads
- Diameter : 9.2 inch (for 8” wafer)
- Single Block Aluminum (Not welded, Minimized gas leak)
- Uniform gas flow design (Patent No. 10-1701381)
Generator
- Frequency : (RF) 13.56MHz
- Power : Max. 300W (Opt. 600W)
- Automatic Impedance Matching
- Process Monitoring and Control
Gas flow module
- Maximum Number of gas channels : × 4 lines
- Gas flow control : High repeatability MFC
- Purge line : × 1 ea
- Vent line : × 1 ea
- MFC Flow rate : Max.200 sccm (1 sccm increment)
Vacuum Package
- DN40 pneumatic operated soft-start pumping valve
- APC Module : Butterfly type throttle valve combined with 10 Torr Capacitance Manometer
- Pump : Oil Rotary Pump
- Pump displacement : 1,000 L/min @ 60Hz
- Ultimate Pressure : 5×10-3 Torr
Controller
- DSP on board signal controller
- Automatic / Manual operation
- Interactive integrated software
- 10.2” Touchscreen PC & USB data transfer
- Saving and loading of process recipes
- Real-time process graphs and error monitoring
System Dimension
- Main System : 680×1,030×1,200 (W×D×H, mm)
- Vacuum Pump : 709×250×387 (W×D×H, mm)
- Chiller : 580×290×470 (W×D×H, mm)